Instabilitäten und Durchbruch von Polycid-SiO₂-Si-Strukturen = Instability, breakdown, polysilicium, silicide MOS capacityMARKGRAF, W; HOFMANN, H.-P; BEYER, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Karl-Marx-Stadt. 1989, Vol 31, Num 4, pp 585-594, issn 0863-0615, 10 p.Article

Temperature dependent analysis of the pulsed MOS capacitor for semiconductor material characterizationRADZIMSKI, Z; GAYLORD, E; HONEYCUTT, J et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 10, pp 2597-2601, issn 0013-4651Article

A bias voltage dependence of trapped hole annealing and its measurement techniqueKUBOYAMA, S; GOKA, T; TAMURA, T et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 6, pp 1140-1144, issn 0018-9499, 1Conference Paper

Effect of low pressure corona discharge on MOS characteristicsILA PRASAD; SRIVASTAVA, R. S.Indian journal of pure & applied physics. 1990, Vol 28, Num 5, pp 284-286, issn 0019-5596Article

Roles of corners in matching of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 467-469, issn 0098-4094, 3 p.Article

A new measurement technique for MOS capacitorsIL-SONG HAN.IEEE transactions on instrumentation and measurement. 1985, Vol 34, Num 4, issn 0018-9456, 682Article

Postmetallisation annealing of aluminium-silicon gate mose capacitorsMCGILLIVRAY, I; ROBERTSON, J. M; WALTON, A. J et al.Electronics Letters. 1985, Vol 21, Num 21, pp 973-974, issn 0013-5194Article

Matching properties of linear MOS capacitorsRAJINDER SINGH; BHATTACHARYYA, A. B.IEEE transactions on circuits and systems. 1989, Vol 36, Num 3, pp 465-467, issn 0098-4094, 3 p.Article

A comparison of MOS inversion layer charge and capacitance formulasBREWS, J. R.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 2, pp 182-187, issn 0018-9383Article

Dielectric characteristics of fluorinated ultradry SiO₂NISHIOKA, Y; OHJI, Y; MUKAI, K et al.Applied physics letters. 1989, Vol 54, Num 12, pp 1127-1129, issn 0003-6951, 3 p.Article

INFLUENCE DES PROCESSUS TUNNEL DE GENERATION SUR LA RELAXATION DE LA CAPACITE DES STRUCTURES MDSV'YUKOV LA; SURIS RA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1768-1773; BIBL. 11 REF.Article

In depth generation lifetime profiling of heat-treated Czochralski siliconBRAUNIG, D; YANG, K. H; TAN, T. Y et al.Physica status solidi. A. Applied research. 1985, Vol 92, Num 1, pp 327-335, issn 0031-8965Article

Effect of semiconductor thickness on capacitance-voltage characteristics of an MOS capacitorNAGAI, K; HAYASHI, Y.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 1659-1660, issn 0021-4922Article

Realisierung der Kondensatoren in integrierten SCOV-Schaltungen = Réalisation des condensateurs dans les circuits intégrés VLSI = Realization of condensers in VLSI integrated circuitsKRAUSS, M.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1985, Vol 34, Num 4, pp 131-138, issn 0043-6925Article

Effect of pre-annealing in preventing gate oxide breakdown voltage degradation induced by polysilicon gate dilineation using ion millingYAMAUCHI, N; YACHI, T; WADA, T et al.Japanese journal of applied physics. 1983, Vol 22, Num 8, pp 539-540, issn 0021-4922Article

Characterization of leakage currents in long-lifetime capacitorsOUALID, J; AMMAR BOUHDADA.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 9, pp 1366-1370, issn 0018-9383Article

ORIGIN OF HIGH-FREQUENCY DISPERSION OF G_P/OMEGA OF METAL-OXIDE SEMICONDUCTOR CAPACITORSKNOLL M; FAHRNER WR.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 3071-3072; BIBL. 7 REF.Article

Entirely gate-surrounded MOS capacitor to study the intrinsic oxide qualityKERBER, M.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 12, pp 2814-2816, issn 0018-9383Article

Observation of slow states in conductance measurements on silicon metal-oxide-semiconductor capacitorsUREN, M. J; COLLINS, S; KIRTON, M. J et al.Applied physics letters. 1989, Vol 54, Num 15, pp 1448-1450, issn 0003-6951Article

Direct indication of lateral nonuniformities of MOS capacitors from the negative equivalent interface trap density based on charge-temperature techniqueHWU, J. G; WANG, W. S.Applied physics. A, Solids and surfaces. 1986, Vol 40, Num 1, pp 41-46, issn 0721-7250Article

Polysilicon capacitor failure during rapid thermal processingMCGRUER, N. E; OIKARI, R. A.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 929-933, issn 0018-9383Article

Rapid thermal annealing of interface states in aluminum gate metal-oxide-silicon capacitorsREED, M. L; FISHBEIN, B; PLUMMER, J. D et al.Applied physics letters. 1985, Vol 47, Num 4, pp 400-402, issn 0003-6951Article

On physical models for gate oxide breakdownHOLLAND, S; CHEN, I. C; MA, T. P et al.IEEE electron device letters. 1984, Vol 5, Num 8, pp 302-305, issn 0741-3106Article

Deactivation of group III acceptors in silicon during keV electron irradiationCHIH-TANG SAH; JACK YUAN-CHEN SUN; JENGTAO TZOU, J et al.Applied physics letters. 1983, Vol 43, Num 10, pp 962-964, issn 0003-6951Article

Reliability characteristics of metal-oxide-semiconductor capacitors with chemical vapor deposited Ta₂O₅ gate dielectricsLO, G. Q; KWONG, D. L; LEE, S et al.Applied physics letters. 1993, Vol 62, Num 9, pp 973-975, issn 0003-6951Article